GaAs HEMT- HTS Resonator-based X-Band Oscillator made by a Hybrid and Integrated Technology
- Project Title:
- GaAs HEMT- HTS Resonator-based X-Band Oscillator made by a Hybrid and Integrated Technology
- X-BAND SRO
- Work Area:
- High-Temperature Superconductivity related to Low-Current Applications
- IMEC vzw
B - 3001 LEUVEN
- Coordinator Country:
- Universidad de Valladolid E
Université des Sciences et Technique de Lille F
Alcatel Alsthom Recherche F
CEA - DTA F
CNR Instituto Lamel I
- Contact Point:
- Dr. G. Borghs
- hybrid integration, high-temperature superconductivity, GaAs, HEMT technology, epitaxial lift-off, flip-chip bonding
- Start Date:
- 1 June 92
- 36 months
- A 77 K superconducting resonator low phase noise oscillator at 12 GHz will be realised and fully characterised. A GaAs HEMT device and a YBCO superconducting resonator will be monolithically integrated using a hybrid approach. The frequency of 12 GHz matches x-based telecommunication systems.
The consortium aims to achieve a high quality x-band oscillator through the hybrid integration of a high performance active GaAs HEMT device with that of a high-Q High-T c superconducting resonator with the entire system functioning at 77K.
APPROACH AND METHODS
The consortium intends to fabricate circuits which shall be fully characterised. Through a succession of circuit iterations the optimised component should be reached.
The important aspects of the processing will be addressed by the other members and comprise:
- film growth and patterning (Alcatel Alsthom Recherche)
- buffer layers and passivation (CNR Lamel)
- study of pattern damage (Universidad de Valladolid)
- hybrid integration by epitaxial lift-off (IMEC)
- hybrid integration using a flip-chip technique (LETI).
PROGRESS AND RESULTS
The optimum design of the resonator has been established in the form of a ring coupled to a transmission line by the Lille University through their expertise in simulation and design. The high performance HEMTs were fabricated at IMEC using MBE growth techniques and have achieved the required performance levels for the project. Alcatel and LETI have succeeded in growing device quality superconductivity films with Laser deposition and DC magnetron sputtering. Univ. of Lille has developed the microwave characterisation facilities for the films and the system. CNR Lamel has successfully developed the ability to grow strontium titanate buffers on MgO using laser deposition. Valladolid has been analysing the effects of patterning using the micro-Raman technique. IMEC has also developed the Epitaxial lift off (ELO) technique for hybrid integration of the system. Similarly LETI has developed the flip-chip bonding technique for integration purposes.
The experimental determination of the complex conductivity will be decisive to know the behaviour of the high Tc cuprate oxides.
The development of specific CAD based software will permit a realistic modelling of superconducting planar guided wave structures which is not possible with today's available commercial softwares.
The final demonstrator is particularly relevant for telecommunication systems embarked on board satellites.
- Chauvel D, Playez E and Crosnier Y Optimisation du couplage pour l'utilisation du résonateur à haut Tc en hyperfréquences Poster presented at 8ième Journée Nationales Micro-ondes, Brest
- Realisation of an X-band oscillator with a superconducting YBaCuO resonator and a GaAs active device Poster presented at the workshop on EU activities in high temperature superconductivity, Strasbourgh
- Villegier J C, Moriceau H, Boucher H, Di Cioccio L, Ghis A, Jager A, Levis M, Pourtier F, Schwertfeger M, Vabre M, Villard C and Chicault R YBaCuO based multilayers for optoelectronic devices Materials Sciences and Engineering, B15, pp.92-100
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Sven Müßig, last update 07-nov-1995. Your feedback is welcome.