Physics and Application of Resonant Tunnelling for Novel Electronic, Infrared and Optical Devices
Description
- Project Title:
- Physics and Application of Resonant Tunnelling for Novel Electronic, Infrared and Optical Devices
- Acronym:
- PARTNERS
- Number:
- 7193
- Work Area:
- Nanoelectronics
- Coordinator:
- IMEC vzw
Kapeldreef 75
B - 3001 LEUVEN
- Coordinator Country:
- B
- Partners
- Max-Planck Institut für Festkörperforschung D
CNRS-INSA F
Chalmers University of Technology S
Linkoeping University S
University of Nottingham UK
- Contact Point:
- Prof. G. Borghs
- Telephone:
- +32/16 281 287
- Fax:
- +32/16 281501
- E-Mail:
- borghs@imec.be
- Keywords:
- nanoelectronics, transport properties, growth, processing, characterisation of vertical tunnelling components
- Start Date:
- 1 October 92
- Duration:
- 36 months
- Status:
- running
- Abstract:
- This project studies the physics and potential device applications of resonant tunnelling and related structures. Demonstrator components are resonant tunnelling light-emitting diodes for the near-infrared, single- and double-barrier varactors, and double-barrier interband tunnelling structures. Analysis tools are microscopic steady-state, picosecond- and femtosecond-resolved spectroscopies with and without the application of magnetic fields or hydrostatic pressure.
AIMS
The main goal of PARTNERS is the creation of new classes of devices based on the most recent findings in tunnelling transport. Three basic activities will play a crucial role in the realisation of the aims:
- Theory and modelling: in particular the development of a fundamental physical model for the description of electrical and optical properties of structures.
- Physical analysis: in particular steady-state optical analysis, magneto-optical analysis and transient optical analysis and high-frequency high-speed analysis of operational tunnelling structures.
- Growth and processing: especially the molecular beam epitaxial growth of heterostructures in various III-V materials and ultra-fine lithography, enabling the advanced processing of vertical tunnelling components with nanoscale lateral dimensions.
APPROACH AND METHODS
The members of the consortium have all been responsible for international pioneering work in this field. Building upon the most recent developments in the various laboratories, the partners will formulate a series of devices to form the framework of the work. In many cases, prototypes of the proposed devices have already been constructed and exhibit promising characteristics that would be relevant for future industrial applications.
The essential theme of the research will be to gain understanding of the basic physics underlying the operation of the devices. Each device will be pushed to its performance limits using all the techniques and expertise available. Exploitable devices will be identified and redesigned to maximise their industrial applicability by careful selection of growth and fabrication parameters. Specific, desirable properties will be emphasised with this approach. Feedback between the three areas of theory, analysis and fabrication should produce the ultimate goal: a series of prototype devices available to the European semiconductor industry for further development.
PROGRESS AND RESULTS
By modifying the basic double-barrier resonant tunnelling light-emitting diode (RTLED) structure, drastic improvements in optical characteristics have been obtained by the groups working on the RTLED. The main point was the formation of a triple-barrier structure with either strong or weak coupling between the quantum wells. It has resulted in giant optical bistable behaviour or intense spatially indirect emission that strongly red-shifts with bias. Higher-energy tansitions (near-visible wavelength range) have been obtained both in double-barrier and in superlattice RTLEDs. This non-thermal occupation of higher subbands indicates the possibility of intersubband transitions leading to infrared emission.
Collaboration between three partners has resulted in successfully processed InAs/AlSb interband resonant tunnelling diodes. Finally, our theoreticists have been able to accurately model intrinsic bistability and its breakdown in double-barrier resonant tunnelling structures. Modelling of triple-barrier structures has started.
POTENTIAL
Although the research carried out by the different institutions and the value offered by cooperation ensures a long-term industrial potential, the project is developing basic technology that industry will need in the medium term. Real applications are foreseen in consumer electronics, telecommunications and space. Major interest in the consortium's work has already been expressed by various European system houses.
LATEST PUBLICATIONS
- Grahn H T, Rühle W W and Ploog K Carrier injection into higher subbands by resonant tunnelling in superlattices SPIE Proceedings 'Quantum Well and Superlattice Physics IV (1992)
- Bertram D, Lage H, Grahn H T and Ploog K Electroluminescence Spectroscopy of Resonant Tunnelling in GaAs/AlAs superlattice presented at the 8th Internation Conference on Hot Carriers in Semiconductors, Oxford, England (August 1993)
- Huang X, Evans H B, Eaves L and Henini M An unusual bistability effect in the electroluminescence of a stepped p-i-n resonant tunnelling diode presented at the 8th Internation Conference on Hot Carriers in Semiconductors, Oxford, England (August 1993)
- Nogaret A, Maldonado M A, Carnahan R E, Aristone F, Maude D K, Portal J C, Chen J F and Cho A Y Resonant and off-resonant phenomena in double-barrier interband tunnelling structures Physical Review B47 (1993)
- Raymond S, Van Hoof C, Genoe J, Mertens R, Borghs G, Yan Z and Goovaerts E Resonant Tunnelling light-emitting diode as optical switch Electronics Letters, 14 (1993)
INFORMATION DISSEMINATION ACTIVITIES
A number of publications originating from this work (several still in press) are available from the coordinator. Also the consortium has presented its results on international conferences. Meetings have been held in Grenoble (CNRS/SNCI-INSA) in October, 1992 and in Göteborg (Chalmers University of Technology) in April 1993.
Sven Müßig, last update 07-nov-1995. Your feedback is welcome.